کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8148531 | 1524338 | 2018 | 28 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
An analysis of the specificity of defects embedded into (1â¯0â¯0) and (1â¯1â¯1) faceted CVD diamond microcrystals grown on Si and Mo substrates by using E/H field discharge
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
The PE CVD method with magnetic field discharge stabilization was applied for the growth of arrays of freestanding diamond grains (island films) as well as continuous films on Mo and Si substrates with (1â¯1â¯1) and (1â¯0â¯0) faceted microcrystals, respectively. Raman, SEM, XRD and PL methods were used for search of the specific features of defects embedded into (1â¯0â¯0) and (1â¯1â¯1) faceted grains. The main characteristic differences in the defect states of the diamond island films grown on Si and Mo substrates with (1â¯0â¯0) and (1â¯1â¯1) faceted diamond microcrystals were discussed on the base of the experimental data.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 491, 1 June 2018, Pages 103-110
Journal: Journal of Crystal Growth - Volume 491, 1 June 2018, Pages 103-110
نویسندگان
Iurii Nasieka, Victor Strelchuk, Victor Naseka, Yuriy Stubrov, Stanislav Dudnik, Vasiliy Gritsina, Oleg Opalev, Konstantin Koshevoy, Vladimir Strel'nitskij, Vasyl Tkach, Mykola Boyko, Ievgen Antypov,