کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8148663 | 1524342 | 2018 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Twin InSb/GaAs quantum nano-stripes: Growth optimization and related properties
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Growth of InSb/GaAs quantum nanostructures on GaAs substrate by using molecular beam epitaxy with low growth temperature and slow growth rate typically results in a mixture of isolated and paired nano-stripe structures, which are termed as single and twin nano-stripes, respectively. In this work, we investigate the growth conditions to maximize the number ratio between twin and single nano-stripes. The highest percentage of the twin nano-stripes of up to 59% was achieved by optimizing the substrate temperature and the nano-stripe growth rate. Transmission electron microscopy reveals the substantial size and height reduction of the buried nano-stripes. We also observed the Raman shift and photon emission from our twin nano-stripes. These twin nano-stripes are promising for spintronics and quantum computing devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 487, 1 April 2018, Pages 40-44
Journal: Journal of Crystal Growth - Volume 487, 1 April 2018, Pages 40-44
نویسندگان
Phisut Narabadeesuphakorn, Supachok Thainoi, Aniwat Tandaechanurat, Suwit Kiravittaya, Noppadon Nuntawong, Suwat Sopitopan, Visittapong Yordsri, Chanchana Thanachayanont, Songphol Kanjanachuchai, Somchai Ratanathammaphan, Somsak Panyakeow,