کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8148743 | 1524343 | 2018 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Impact of temperature and nitrogen composition on the growth of GaAsPN alloys
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
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چکیده انگلیسی
This paper presents the impact of temperature and nitrogen-composition on the growth mode and crystallinity of GaAsPN alloys. Reflection high-energy electron diffraction results combined with transmission electron microscopy analysis revealed that maintaining two-dimensional (2-D) growth required higher temperatures when nitrogen composition increased. Outside the 2-D growth windows, stacking faults and micro-twins were preferentially formed at {1â¯1â¯1} B planes rather than at the {1â¯1â¯1} A planes and anomalous growth was observed. The photoluminescence spectra of GaAsPN layers implies that the higher temperature growth is effective for reducing the nitrogen-related point defects.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 486, 15 March 2018, Pages 24-29
Journal: Journal of Crystal Growth - Volume 486, 15 March 2018, Pages 24-29
نویسندگان
Keisuke Yamane, Shun Mugikura, Shunsuke Tanaka, Masaya Goto, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara,