کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8148771 | 1524343 | 2018 | 13 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth and characterization of metal doped and quasi mixed crystals based on ZnCd(SCN)4
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In order to understand the effect of forming hybrid crystals by doping with metallic impurities or by quasi mixing on the physicochemical properties of the basic material crystal, we have grown by the free evaporation method at room temperature and characterized (chemically, structurally, optically and electrically) un-doped and K+/Ca2+/Mn2+/Mg2+/Cu2+ doped (with 1â¯mol% concentration) ZnCd(SCN)4 and ZnxCd(2-x)(SCN)4 (with xâ¯=â¯0.0, 0.4, 0.8, 1.2, 1.6 and 2.0) single crystals. Single crystals could be grown with xâ¯=â¯0.0 (leading to Cd(SCN)2) but not when xâ¯=â¯2.0 (leading to Zn(SCN)2). Results obtained in the present study through X-ray diffraction and EDAX spectral measurements indicate the formation of the above hybrid crystals. The optical (UV-Vis-NIR spectral and SHG efficiency) measurements indicate significant changes in optical transmittance and SHG efficiency due to doping as well as quasi mixing. Dielectric measurements made in the temperature range 40-150â¯Â°C with a fixed frequency of 1â¯kHz indicate a normal dielectric behavior for all the eleven crystals grown. Moreover, the present study indicates an increase of dielectric constant and SHG efficiency when ZnCd(SCN)4 crystal is doped with a metallic impurity whereas a decrease of dielectric constant and SHG efficiency when quasi mixing is done.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 486, 15 March 2018, Pages 148-154
Journal: Journal of Crystal Growth - Volume 486, 15 March 2018, Pages 148-154
نویسندگان
C. Latha, C.K. Mahadevan, Li Guo, Jinghe Liu,