کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8148776 | 1524344 | 2018 | 37 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Three dimensional modelling of grain boundary interaction and evolution during directional solidification of multi-crystalline silicon
ترجمه فارسی عنوان
مدل سازی سه بعدی تعامل و تکامل مرز دانه در طی انقباض جهت سیلیکون چند کریستالی
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
چکیده انگلیسی
The development of grain structures during directional solidification of multi-crystalline silicon (mc-Si) plays a crucial role in the materials quality for silicon solar cells. Three dimensional (3D) modelling of the grain boundary (GB) interaction and evolution based on phase fields by considering anisotropic GB energy and mobility for mc-Si is carried out for the first time to elucidate the process. The energy and mobility of GBs are allowed to depend on misorientation and the GB plane. To examine the correctness of our method, the known the coincident site lattice (CSL) combinations such as (âa+âbââaÃb) or (âa+âbââa/b) are verified. We frther discuss how to use the GB normal to characterize a â3 twin GB into a tilt or a twist one, and show the interaction between tilt and twist â3 twin GBs. Two experimental scenarios are considered for comparison and the results are in good agreement with the experiments as well as the theoretical predictions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 485, 1 March 2018, Pages 8-18
Journal: Journal of Crystal Growth - Volume 485, 1 March 2018, Pages 8-18
نویسندگان
T. Jain, H.K. Lin, C.W. Lan,