کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8148896 | 1524346 | 2018 | 20 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Enhanced B doping in CVD-grown GeSn:B using B δ-doping layers
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Enhanced B doping in CVD-grown GeSn:B using B δ-doping layers Enhanced B doping in CVD-grown GeSn:B using B δ-doping layers](/preview/png/8148896.png)
چکیده انگلیسی
Highly doped GeSn material is interesting for both electronic and optical applications. GeSn:B is a candidate for source-drain material in future Ge pMOS device because Sn adds compressive strain with respect to pure Ge, and therefore can boost the Ge channel performances. A high B concentration is required to obtain low contact resistivity between the source-drain material and the metal contact. To achieve high performance, it is therefore highly desirable to maximize both the Sn content and the B concentration. However, it has been shown than CVD-grown GeSn:B shows a trade-off between the Sn incorporation and the B concentration (increasing B doping reduces Sn incorporation). Furthermore, the highest B concentration of CVD-grown GeSn:B process reported in the literature has been limited to below 1â¯Ãâ¯1020â¯cmâ3. Here, we demonstrate a CVD process where B δ-doping layers are inserted in the GeSn layer. We studied the influence of the thickness between each δ-doping layers and the δ-doping layers process conditions on the crystalline quality and the doping density of the GeSn:B layers. For the same Sn content, the δ-doping process results in a 4-times higher B doping than the co-flow process. In addition, a B doping concentration of 2â¯Ãâ¯1021â¯cmâ3 with an active concentration of 5â¯Ãâ¯1020â¯cmâ3 is achieved.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 483, 1 February 2018, Pages 285-290
Journal: Journal of Crystal Growth - Volume 483, 1 February 2018, Pages 285-290
نویسندگان
David Kohen, Anurag Vohra, Roger Loo, Wilfried Vandervorst, Nupur Bhargava, Joe Margetis, John Tolle,