کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8149218 | 1524375 | 2016 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
HVPE homoepitaxial growth of high quality bulk GaN using acid wet etching method and its mechanism analysis
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
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چکیده انگلیسی
In this paper, crack-free 2-inch bulk GaN wafer with the thickness up to 3Â mm was obtained by HVPE homoepitaxy. A new method of acid wet etching was used to pre-treat GaN substrate before re-growth. The formation of the mesh-like subsurface crack and interface layer were found to be suppressed between the re-growth layer and as-grown GaN substrate. EDS and time varied contact angle measurement proved that chemical etching would decrease the oxygen related surface adsorption and increase atoms diffusion length during HVPE homoepitaxial growth. Moreover, Morphology, Low temperature photoluminescence measurements indicated a reduction in stress of wet etching treated as-grown GaN substrate due to etching effect on its N face. High quality bulk GaN with the dislocation density of 1Ã106Â cmâ2 was achieved by using wet etching and HVPE multiple re-growth. It would offer a simple method to obtain bulk GaN with thicker layer and high quality.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 454, 15 November 2016, Pages 59-63
Journal: Journal of Crystal Growth - Volume 454, 15 November 2016, Pages 59-63
نویسندگان
Nanliu Liu, Yutian Cheng, Jiejun Wu, Xingbin Li, Tongjun Yu, Huan Xiong, Wenhui Li, Jiao Chen, Guoyi Zhang,