کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8149442 | 1524394 | 2016 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
ErAsSb nanoparticle growth on GaAs surface by molecular beam epitaxy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: ErAsSb nanoparticle growth on GaAs surface by molecular beam epitaxy ErAsSb nanoparticle growth on GaAs surface by molecular beam epitaxy](/preview/png/8149442.png)
چکیده انگلیسی
ErAsSb nanoparticle (NP) growth is investigated on GaAs surface by molecular beam epitaxy. ErAsSb NP grown under Sb flux is compared to pure ErAs NP grown under As flux. It is found the incorporation of Sb is rather low in ErAsSb. However, ErAsSb NP exhibits very different structural and optical properties. ErAsSb NPs on GaAs preferentially elongates along the [1-10] direction with increasing deposition and growth temperature. The absorption peak for light polarized parallel to the long axis of the particles is found to occur at longer wavelengths than those for light polarized perpendicular to the long axis of the particles. The results can be attributed to Sb surfactant effect.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 435, 1 February 2016, Pages 62-67
Journal: Journal of Crystal Growth - Volume 435, 1 February 2016, Pages 62-67
نویسندگان
Yuanchang Zhang, Kurt G. Eyink, Joseph Peoples, Krishnamurthy Mahalingam, Madelyn Hill, Larry Grazulis,