کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8149561 | 1524397 | 2015 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Fabrication of InAs quantum dot stacked structure on InP(311)B substrate by digital embedding method
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
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![عکس صفحه اول مقاله: Fabrication of InAs quantum dot stacked structure on InP(311)B substrate by digital embedding method Fabrication of InAs quantum dot stacked structure on InP(311)B substrate by digital embedding method](/preview/png/8149561.png)
چکیده انگلیسی
Self-assembled InAs quantum dots (QDs) grown on an InP(311)B substrate were embedded using lattice-matched InAlAs/InGaAs superlattice with the digital embedding method. The thickness of quantum wells and barriers of the superlattice varied from 2 to 16 monolayers. The six layer stacking structures were successfully grown without any degradation of the QD and superlattice structure. The cross-sections of QDs embedded within the superlattice were visualized by scanning transmission microscope. The emission wavelength of the QDs was measured by photoluminescence and could be changed by changing the thickness of the superlattice.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 432, 15 December 2015, Pages 15-18
Journal: Journal of Crystal Growth - Volume 432, 15 December 2015, Pages 15-18
نویسندگان
Kouichi Akahane, Naokatsu Yamamoto, Tetsuya Kawanishi,