کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8149625 | 1524404 | 2015 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Defect creation in InGaAs/GaAs multiple quantum wells-I. Structural properties
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We present a systematic study of extended defect creation in InGaAs/GaAs multiple quantum well (MQW) structures. Three sets of samples, grown by molecular beam epitaxy, were characterized by high-resolution x-ray diffraction and transmission electron microscopy. First, in a temperature series, optimal deposition temperature of 505 °C was found for the In composition of 20% as determined from dislocation loop (DL) density and inspection of diffuse scattering patterns. InGaAs decomposition and lateral layer thickness undulations were observed above this optimal temperature. Second, increase of MQW periodicity from Ã5 to Ã10 revealed a thickness-related cumulative deterioration, characterized by increased likelihood of defect intersection with continued MQW growth, as suggested by an increase of the secondary DL density from ~1.6Ã107 cmâ2 to ~6Ã108 cmâ2. Additional strained layers experienced an ever-degrading quality of the growth surface. Third, a set consisting of samples with three different MQW periods was investigated. Different stages, suggested by a model of defect creation, were obtained for these different MQW periods, allowing specification of particular type, density, and spatial distribution of extended defects for each stage of defect creation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 425, 1 September 2015, Pages 43-48
Journal: Journal of Crystal Growth - Volume 425, 1 September 2015, Pages 43-48
نویسندگان
Matthias M. Karow, Nikolai N. Faleev, David J. Smith, Christiana B. Honsberg,