کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8149902 | 1524404 | 2015 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Physical properties of InGaO3(ZnO)m with various content ratio grown by PAMBE
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The quaternary compound semiconductor (InGaO3(ZnO)m); m=1,2,3â¦)(IGZO) thin films were fabricated by plasma-assisted molecular beam epitaxy. First, the IGZO thin films were grown under the variation of gallium cell temperature to evaluate the fundamental properties of IGZO. A phase transformation between crystalline and amorphous is observed when the gallium content ratio is higher than 28 at%. It revealed redundancy in the metal, which would self-assist the channel or defect state to destroy the crystal structure. The highest mobility of 74.3 cm2/V s was obtained at 28 at% of gallium. By tuning the element content of quaternary compounds, the ternary plots distribution of IGZO thin films exhibits an amorphous structure in most regions. Therefore, the stoichiometric condition of IGZO, which is 1:1:1:4, is demonstrated at the amorphous structure. Additionally, it transitions to crystalline structure after a 1100 °C annealing process.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 425, 1 September 2015, Pages 258-261
Journal: Journal of Crystal Growth - Volume 425, 1 September 2015, Pages 258-261
نویسندگان
Chu Shou Yang, Shin Jung Huang, Yu Chung Kao, Guan He Chen, Wu-Ching Chou,