کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
8150126 1524412 2015 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Simulation of the influence of gas flow on melt convection and phase boundaries in FZ silicon single crystal growth
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Simulation of the influence of gas flow on melt convection and phase boundaries in FZ silicon single crystal growth
چکیده انگلیسی
Axisymmetric calculations of inert gas flow in a floating zone puller are carried out using an open source software package OpenFOAM. Transient axisymmetric melt flow in liquid silicon and quasi-stationary shape of silicon phase boundaries are calculated using a specialized program FZone. Additional heat losses at silicon surfaces caused by the gas flow are taken into account for argon and helium, while maintaining the height of molten zone by adjusting inductor current. Cooling causes an increase of electromagnetic force, heat sources and more intense melt flow, while crystallization interface deflection decreases. The shear stress of gas flow is found to be an order of magnitude weaker than electromagnetic and Marangoni forces.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 417, 1 May 2015, Pages 51-57
نویسندگان
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