In-situ observation of the growth of individual silicon wires in the zinc reduction reaction of SiCl4

We conducted in-situ monitoring of the formation of silicon wires in the zinc reduction reaction of SiCl4 at 950 °C. Tip growth with a constant growth rate was observed. Some wires showed a sudden change in the growth direction during their growth. We also observed both the lateral faces and cross sections of formed wires using a scanning electron microscope. Although wires with smooth lateral faces had a smooth hexagonal cross section, those with rough lateral faces had a polygonal cross section with a radial pattern. The transition of lateral faces from smooth to rough was found even in a single wire. Because the diameter of the rough part became larger than that of the smooth part, we consider that the wire diameter is a key factor for the lateral faces. Our study revealed that both dynamic and static observations are still necessary to further understand the VLS growth of wires and nanowires.