کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8151540 | 1524443 | 2014 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth and characterization of wurtzite GaP nanowires with control over axial and radial growth by use of HCl in-situ etching
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Growth and characterization of wurtzite GaP nanowires with control over axial and radial growth by use of HCl in-situ etching Growth and characterization of wurtzite GaP nanowires with control over axial and radial growth by use of HCl in-situ etching](/preview/png/8151540.png)
چکیده انگلیسی
We report on the synthesis of non-tapered wurtzite (WZ) GaP nanowires by use of in-situ etching and the structural and optical characterization thereof. HCl was evaluated as an in-situ etchant in order to impede the onset of radial growth since the WZ crystal phase in GaP nanowires preferentially grows at relatively high growth temperatures around 600 °C, at which strong radial growth typically occurs. Transmission electron microscopy measurements confirmed non-tapered WZ GaP nanowires after growth. Photoluminescence characterization revealed defect related red emission, possibly related to transitions within the bandgap. Raman measurements show that the phonon energies in WZ GaP are very close in energy to the phonon energies in zinc blende GaP.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 386, 15 January 2014, Pages 47-51
Journal: Journal of Crystal Growth - Volume 386, 15 January 2014, Pages 47-51
نویسندگان
Alexander Berg, Sebastian Lehmann, Neimantas Vainorius, Anders Gustafsson, Mats-Erik Pistol, L. Reine Wallenberg, Lars Samuelson, Magnus T. Borgström,