کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8151656 | 1524443 | 2014 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth of CdTexSe1âx from a Te-rich solution for applications in radiation detection
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
We grew CdTexSe1âx (CTS) crystals from a Te-rich solution by using the traveling heater method (THM). The average size distribution and concentration of Te inclusions/precipitates in these as-grown samples were measured to be ~7Ã104 cmâ3, which is much lower than values typical for the present state-of-the-art commercial CdZnTe (CZT) material. Their low-temperature photoluminescence measurement indicates high quality of the material; however the resistivity obtained via I-V curve measurements was ~5Ã108 Ω-cm, which is low in comparison to that required for gamma detectors. A well-resolved alpha response peak can be detected for both planar- and hemispherical detector geometry. The (μÏ)e value for our as-grown sample at room temperature was found to be ~4Ã10â3 cm2/V.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 386, 15 January 2014, Pages 43-46
Journal: Journal of Crystal Growth - Volume 386, 15 January 2014, Pages 43-46
نویسندگان
U.N. Roy, A.E. Bolotnikov, G.S. Camarda, Y. Cui, A. Hossain, K. Lee, M. Marshall, G. Yang, R.B. James,