کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
8152053 1524449 2013 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Al-enhanced N incorporation in GaNAs alloys grown by chemical beam epitaxy
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Al-enhanced N incorporation in GaNAs alloys grown by chemical beam epitaxy
چکیده انگلیسی
The N incorporation is studied in AlGaNAs with low Al content grown by chemical beam epitaxy at low temperature using dimethylhydrazine as the N precursor. The incorporation efficiency is significantly enhanced by introducing a relatively low Al concentration. The relation between the N incorporation and N/(N+As) flow ratio for Al concentrations of 0-15% is presented. The highest N incorporation and the best AlGaNAs crystal quality are obtained between 400 °C and 440 °C, where the growth mode starts to change from 2D to 3D. The activation energies for N incorporation in both the 2D and 3D growth mode regions are extracted.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 380, 1 October 2013, Pages 256-260
نویسندگان
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