کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8152368 | 1524474 | 2012 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structural and optical properties of thick freestanding AlN films prepared by hydride vapor phase epitaxy
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The morphology, structural and optical properties of void-assisted freestanding HVPE-AlN films were investigated by a combination of non-destructive microscopic and spectroscopic techniques. The freestanding approximately 80 μm thick clear film has a wurtzite crystalline structure with remarkable properties around the central film region. The E2(high)-phonon frequency coincides with reported stress-free film phonon frequency. The low temperature luminescence study of the growth and interface sides of the film is consistent with the incorporation of a high concentration of oxygen impurities. These results are promising as the growth method amenable to the production of freestanding stress-free large area substrates for epitaxial growth.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 350, Issue 1, 1 July 2012, Pages 33-37
Journal: Journal of Crystal Growth - Volume 350, Issue 1, 1 July 2012, Pages 33-37
نویسندگان
J.A. Jr., J.C. Culbertson, M.A. Mastro, Y. Kumagai, A. Koukitu,