کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
8160662 1525111 2018 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Features of changes in electrophysical properties of silicon under the influence of thermal treatment
ترجمه فارسی عنوان
ویژگی های تغییرات خواص الکتروفیزیکی سیلیکون تحت تاثیر درمان حرارتی
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
چکیده انگلیسی
The influence of the annealing temperatures and cooling rates of n-silicon crystals, grown by the Czochralski method and doped with phosphorus impurity, on their electric and thermoelectric properties was studied. In the region of predominantly impurity scattering a more essential dependence of the charge carrier mobility on the cooling conditions of crystals was established in comparison with the dependence on the annealing temperature. The analysis of the measurement results of tensoresistance and tenso-thermo-emf was carried out, on the basis of which the dependence of the anisotropy parameter of drag thermo-emf on the cooling rate was obtained. The feature of the anisotropy parameter of thermo-emf M in the form of its maximal deviation from the linear dependence M=M(lg(υcl)) was revealed in the region of cooling rates from 8 to 15 K/min.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 538, 1 June 2018, Pages 104-108
نویسندگان
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