کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8163628 | 1525233 | 2013 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electronic topological transition in Nb3Al under compression: An ab initio study
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Electronic topological transition in Nb3Al under compression: An ab initio study Electronic topological transition in Nb3Al under compression: An ab initio study](/preview/png/8163628.png)
چکیده انگلیسی
Very recently Yu et al. studied the structural stability of Nb3Al over a range of pressure up to 39.5Â GPa. They have noticed an anomaly in the pressure volume plot beyond 19.2Â GPa. The physical mechanism is not explained by them. The electronic structure is obtained as function of pressure by the all electron full potential linear augmented plane wave method. The energy dispersion curves are plotted. From the plot we observe that the 'd' like band of Nb at the zone center moves under pressure which may be the possible reason for the isostructural phase transition reported experimentally. The elastic properties are also calculated which also confirms the transition.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 413, 15 March 2013, Pages 1-5
Journal: Physica B: Condensed Matter - Volume 413, 15 March 2013, Pages 1-5
نویسندگان
M. Rajagopalan,