کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8954348 | 1645991 | 2019 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Low atomic number silicon nitride films for transmission electron microscopy
ترجمه فارسی عنوان
فیلم های نیتریدی سیلیکون کم حجم اتمی برای میکروسکوپ الکترونی انتقال
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
چکیده انگلیسی
Low stress silicon (Si)-rich silicon nitride (SiNx) films are usually used as membranes of microcapsules for transmission electron microscopy (TEM). Their relatively high atomic number has a negative impact on resolution, which is a key factor that affects imaging performance. To improve resolution, reducing Si content in films is an effective approach. However, the non-Si-rich SiNx films have large tensile stress and are ease to crack. In this study, ion implantation is utilized to adjust the stress of nearly stoichiometric (NS) SiNx films. The effects of ion implantation and thermal annealing on film properties are carefully analyzed. It is found that the NS SiNx films implanted with nitrogen (N) and annealed at low anneal temperature have both low atomic number and low stress, and their properties are very close to low stress Si-rich SiNx films. Moreover, a simple microcapsule is fabricated using the low atomic number SiNx films, and performs a TEM observation of water-soluble polypeptides growth. Polypeptides much smaller than 100â¯nm in size are observed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 89, January 2019, Pages 1-5
Journal: Materials Science in Semiconductor Processing - Volume 89, January 2019, Pages 1-5
نویسندگان
Jianyu Fu, Wenjuan Xiong, Haiping Shang, Ruiwen Liu, Junfeng Li, Weibing Wang, Wenwu Wang, Dapeng Chen,