کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9585195 | 1392335 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
X-ray absorption and emission spectroscopy at the Hf L1 edge of hafnium-(silicon)-oxide ultra-thin films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: X-ray absorption and emission spectroscopy at the Hf L1 edge of hafnium-(silicon)-oxide ultra-thin films X-ray absorption and emission spectroscopy at the Hf L1 edge of hafnium-(silicon)-oxide ultra-thin films](/preview/png/9585195.png)
چکیده انگلیسی
X-ray absorption and emission spectroscopic study at the Hf L1 edge was applied to investigate the local structure around hafnium atoms in Hf(Si)Ox ultra-thin films, which are the most promising candidates for the high-k gate dielectric material of next generation CMOS devices. HfSiOx showed an extra absorption above the Hf-L1 threshold, which is not seen in HfOx. HfSiOx also had stronger Compton scattering peak in Hf-Lγ emission region, and smaller Hf-Lγ2/Lγ3 ratio, compared with those of HfOx. These differences should be caused by partial replacements of hafnium atoms by silicon atoms as the second nearest neighbors of a hafnium atom.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Electron Spectroscopy and Related Phenomena - Volume 148, Issue 2, August 2005, Pages 75-79
Journal: Journal of Electron Spectroscopy and Related Phenomena - Volume 148, Issue 2, August 2005, Pages 75-79
نویسندگان
Yasushi Uehara, Kazumasa Kawase, Jun'ichi Tsuchimoto, Teruo Shibano,