کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9585220 | 1505783 | 2005 | 13 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Reflected electron energy loss microscopy (REELM) studies of metals, semiconductors and insulators
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Advantages and shortcomings of REELM are outlined against the diagnostic value of parallel results obtained by scanning Auger microscopy (SAM) techniques. Although comparatively poor focussing powers preclude the attainment of high spatial resolution, and spectral interference problems may hinder the chemical characterization of multi-phase materials, REELM features unique capabilities. Among others, these include a chemical contrast that is much superior to that of SAM, the possibility of characterizing the coverage distribution of adlayer surface species, as well as of investigating the microchemistry of insulators' surfaces. The first application of REELM in the analysis of archaeological materials is presented.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Electron Spectroscopy and Related Phenomena - Volume 143, Issues 2â3, May 2005, Pages 219-231
Journal: Journal of Electron Spectroscopy and Related Phenomena - Volume 143, Issues 2â3, May 2005, Pages 219-231
نویسندگان
E. Paparazzo,