کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9585423 | 1505782 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electronic structure of Au-Si(1Â 0Â 0) interface as a function of Au coverage
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We have investigated the Au-Si(1Â 0Â 0) interface as a function of the Au coverage by means of the valence band and Au 4f core-level photoemission spectroscopy. At the initial stage of the Au deposition, deposited Au atoms are close to the atomic Au. With increasing the Au coverage, it is considered that the Au silicide is formed by the influence of the substrate Si atoms. From the relative intensity ratio of the Au 4f core-level spectrum to the Si 2p core-level spectrum, the appearance of the 3D islands was suggested at more than 12 ML. This means that the Au deposited surface is not homogeneous. In addition, it was found that there are two chemically different Au silicide components from the curve fitting analysis of the Au 4f core-level spectrum at the higher Au coverage.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Electron Spectroscopy and Related Phenomena - Volumes 144â147, June 2005, Pages 389-392
Journal: Journal of Electron Spectroscopy and Related Phenomena - Volumes 144â147, June 2005, Pages 389-392
نویسندگان
Yuichi Haruyama, Kazuhiro Kanda, Shinji Matsui,