کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9585444 | 1392339 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Origin of threshold electrons produced in decay of the Xe 4dâ1np resonance
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Coincidence spectra of energetic electrons with threshold electrons were measured following photo-excitation of the Xe 4d3/2, 5/2 â np resonances, in order to investigate the origin of threshold electrons, and the mechanism leading to formation of the Xe2+ 5pâ2 and 5sâ15pâ1 final states. A two-step decay process was observed in the production of Xe2+ 5pâ2(1D) following decay of the 7p resonance, where the intermediate state is Xe+* 5pâ2(1S)8p that autoionizes emitting a pseudo-threshold electron. This process was confirmed in a time-of-flight analysis of the coincidence spectra of the energetic electrons with the threshold photoelectrons. It is suggested that a similar two-step process also contributes to the population of excited Xe2+ states and is the main origin for the production of threshold electrons in decay of the 4dâ1np resonances.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Electron Spectroscopy and Related Phenomena - Volume 142, Issue 3, March 2005, Pages 319-323
Journal: Journal of Electron Spectroscopy and Related Phenomena - Volume 142, Issue 3, March 2005, Pages 319-323
نویسندگان
Tomohiro Aoto, Yasumasa Hikosaka, Richard Hall, Francis Penent, Pascal Lablanquie, Kenji Ito,