کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9586140 | 1392781 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Infrared radiation of zinc selenide single crystals
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
Long-wave photoluminescence (PL) spectra of both as-grown and Au-doped n-ZnSe single crystals are studied in the temperature range from 81 to 300Â K. A narrow band of infrared (IR) radiation centered at 878Â nm (1.411Â eV) manifests itself in the low-temperature PL spectrum. It is established that this band intensity first increases and then decreases with increasing concentration of doping impurity. With increasing excitation radiation intensity, spectral position of the IR PL band is unchanged and its intensity increases under the linear law. With increasing excitation radiation wavelength, the IR PL band intensity increases, it becomes narrower and shifts towards long wavelengths. It is shown that the observed IR radiation is caused by recombination of free electrons with holes localized on associative acceptors (VZn-Aui+)- in the ZnSe:Zn:Au crystals or (VZn-D+)- in the undoped crystals.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volume 114, Issue 1, July 2005, Pages 9-14
Journal: Journal of Luminescence - Volume 114, Issue 1, July 2005, Pages 9-14
نویسندگان
A.N. Avdonin, G.N. Ivanova, T.A. Iurieva, G.V. Kolibaba, D.D. Nedeoglo, N.D. Nedeoglo, V.P. Sirkeli,