Excitonic luminescence of ZnSe single crystals doped with Au

Photoluminescence spectra of ZnSe single crystals doped with Au during a long high-temperature treatment of as-grown crystals in Zn+Au or Se+Au melts are investigated in the temperature range from 83 to 300 K. The Au-doping from Zn+Au melt leads to the formation of both simple defects (Aui donors and AuZn acceptors) and acceptor associates (AuZn-Aui). The edge luminescence is attributed to radiative annihilation of Aui and VSe donor-bound excitons. The edge spectra of the crystals doped with Au from Se+Au melt contain the band ascribed to radiative annihilation of AuZn acceptor-bound excitons.