کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9586202 | 1505939 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Photoluminescence properties of localized states caused by nitrogen alloying in a GaInNAs/GaAs single quantum well
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Photoluminescence properties of localized states caused by nitrogen alloying in a GaInNAs/GaAs single quantum well Photoluminescence properties of localized states caused by nitrogen alloying in a GaInNAs/GaAs single quantum well](/preview/png/9586202.png)
چکیده انگلیسی
We have investigated photoluminescence (PL) properties of localized states induced by nitrogen alloying in a Ga1âxInxNyAs1ây/GaAs single quantum well (SQW) with x=0.33 and y=0.008, comparing with those in a Ga1âxInxAs/GaAs SQW without nitrogen. In order to determine the intrinsic band edge, we also used photoreflectance (PR) spectroscopy that is sensitive to the optical transitions at critical points. The PR line width of the band-edge transition in the GaInNAs/GaAs SQW is much broader than that in the GaInAs/GaAs SQW, which indicates that considerable disorders are introduced by nitrogen alloying. The PL-peak energy of the GaInNAs/GaAs SQW, which has a Stokes shift of â¼20Â meV at 10Â K, continuously shifts to the band edge with an increase in excitation power, reflecting the localization nature of carriers. The PL-decay profile related to the localized states clearly exhibits a stretched exponential feature peculiar to a disordered system. It is concluded that the PL properties at low temperature are dominated by random potentials caused by nitrogen alloying.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volume 112, Issues 1â4, April 2005, Pages 146-150
Journal: Journal of Luminescence - Volume 112, Issues 1â4, April 2005, Pages 146-150
نویسندگان
K. Nomura, T. Yamada, Y. Iguchi, S. Takagishi, M. Nakayama,