کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9591709 1507012 2005 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Ab initio calculations of electronic properties of pure and Ge doped anatase TiO2
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Ab initio calculations of electronic properties of pure and Ge doped anatase TiO2
چکیده انگلیسی
In this paper we compared the electronic properties of the Ge doped anatase TiO2 with that of the pure host lattice. The ab initio calculations were performed by using the full potential-linearized augmented plane wave method (FP-LAPW). The fully optimized structure and the relaxation introduced by the impurity were obtained by minimizing the total energy and atomic forces. The resulted band structure, density of states maybe instructive to the understanding of exceptional behavior in this system.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Molecular Structure: THEOCHEM - Volume 723, Issues 1–3, 20 May 2005, Pages 135-138
نویسندگان
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