کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9594490 | 1507963 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Formation of Sb submonolayer phases on high index Si(5Â 5Â 12) surface
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کلمات کلیدی
antimony - آنتیموان Epitaxy - اپیتاکسیMetal–semiconductor interfaces - رابطهای نیمه هادی فلزیHigh index surfaces - سطوح شاخص بالاAuger electron spectroscopy - طیف سنج الکترونی آگرElectron energy loss spectroscopy - طیف سنجی از دست دادن انرژی الکترونLow energy electron diffraction - پراش الکترونی انرژی پایین
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Formation of Sb submonolayer phases on high index Si(5Â 5Â 12) surface Formation of Sb submonolayer phases on high index Si(5Â 5Â 12) surface](/preview/png/9594490.png)
چکیده انگلیسی
This work is the first report on the submonolayer adsorption of antimony (Sb) on the high index Si(5 5 12) surface, studied in UHV by in situ surface sensitive probes such as Auger electron spectroscopy (AES), electron energy loss spectroscopy (EELS), and low energy electron diffraction (LEED). The Auger growth curve which is a plot of the Sb(MNN)/Si(LVV) Auger peak intensity ratio with deposition time, provides a calibration of a deposition rate of 0.06 ML/min. A coverage of 0.2 ML is obtained by four different routes (a) adsorption at room temperature (RT), (b) adsorption at high substrate temperature (HT) of 680 °C, (c) annealing the RT adsorbed surface to 800 °C and (d) annealing the high substrate temperature (680 °C) adsorbed surface to 800 °C. The (2 2 5) facets are observed for the RT adsorbed system at coverage of 0.2 ML, while the pathway adopted to attain the 0.2 ML coverage by adsorption at elevated temperature shows two different atomic arrangements in the formation of the (3 3 7) facets. The HT adsorbed surface suggests the formation of nano-wire-like features while the 0.2 ML coverage obtained by annealing the HT as well as RT adsorbed surface suggests an anisotropic Sb atomic arrangement.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 596, Issues 1â3, 10 December 2005, Pages 206-211
Journal: Surface Science - Volume 596, Issues 1â3, 10 December 2005, Pages 206-211
نویسندگان
Mahesh Kumar, Vinod Kumar Paliwal, Amish G. Joshi, Govind Govind, S.M. Shivaprasad,