Nanocrystalline silicon film grown by LEPECVD for photovoltaic applications

The structural, electrical and chemical properties of the LEPECVD grown films have been studied as a function of the deposition parameters (substrate temperature, growth rate, silane dilution). The results show that the films consist of elongated nanocrystals along the 〈1 1 1〉direction, embedded in an amorphous matrix. The crystallite size along the 〈1 1 1〉 direction is in the range of 9-20 nm. The volume fraction of crystallinity (χc) varies between 51% and 78%, depending on preparation conditions. Conductivity values of the order of 10−6 Ω−1 cm−1 for the layers were measured, making the material suitable for the p-i-n junction application.