کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9618657 | 49464 | 2005 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Minority carrier lifetime in plasma-textured silicon wafers for solar cells
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
In this work a comparison between plasma-induced defects by two different SF6 texturing techniques, reactive ion etching (RIE) and high-density plasma (HDP) is presented. It is found that without any defect-removal etching (DRE), the minority carrier lifetime is the highest for the HDP technique. After DRE, the minority carrier lifetime rises as high as 750 μs for both RIE- and HDP-textured wafers at an excess carrier density of 1Ã1015 cmâ3. The measured lifetimes correspond to an implied one-sun open-circuit voltage of around 680 mV compared to about 640 mV before DRE for the HDP-textured wafers. FZ silicon ã1 0 0ã wafers were used in this study. We also noted that in the RIE process, the induced defect density was significantly lower for wafers etched at 300 K than those etched at 173 K.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 87, Issues 1â4, May 2005, Pages 99-106
Journal: Solar Energy Materials and Solar Cells - Volume 87, Issues 1â4, May 2005, Pages 99-106
نویسندگان
G. Kumaravelu, M.M. Alkaisi, D. Macdonald, J. Zhao, B. Rong, A. Bittar,