کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9618662 | 49464 | 2005 | 11 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Total SiH4/H2 pressure effect on microcrystalline silicon thin films growth and structure
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Total SiH4/H2 pressure effect on microcrystalline silicon thin films growth and structure Total SiH4/H2 pressure effect on microcrystalline silicon thin films growth and structure](/preview/png/9618662.png)
چکیده انگلیسی
The effect of the total SiH4/H2 gas pressure (1-10Â Torr) on the growth rate, the film crystallinity and the nature of hydrogen bonding of microcrystalline silicon thin films deposited by 13.56Â MHz plasma-enhanced chemical vapour deposition (PECVD) was investigated under well-controlled discharge conditions. The deposition rate presents an optimum for 2.5Â Torr, which does not follow the trend of silane consumption that increases with pressure and is attributed to an increase in plasma density. The film crystallinity increases with pressure from 1-2.5Â Torr and then remains almost the same, whereas the films deposited at 1Â Torr are highly stressed. On the other hand, hydrogen bonding is also drastically affected.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 87, Issues 1â4, May 2005, Pages 157-167
Journal: Solar Energy Materials and Solar Cells - Volume 87, Issues 1â4, May 2005, Pages 157-167
نویسندگان
E. Katsia, E. Amanatides, D. Mataras, Î. Soto, G.A. Voyiatzis,