کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9618698 | 49464 | 2005 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Fabrication of wide-gap Cu(In1âxGax)Se2 thin film solar cells: a study on the correlation of cell performance with highly resistive i-ZnO layer thickness
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Fabrication of wide-gap Cu(In1âxGax)Se2 thin film solar cells: a study on the correlation of cell performance with highly resistive i-ZnO layer thickness Fabrication of wide-gap Cu(In1âxGax)Se2 thin film solar cells: a study on the correlation of cell performance with highly resistive i-ZnO layer thickness](/preview/png/9618698.png)
چکیده انگلیسی
The correlation of the cell performance of wide-gap Cu(In1âxGax)Se2 (CIGS) solar cells with the thickness of highly resistive i-ZnO layers, which are commonly introduced between the buffer layer and the transparent conductive oxide (TCO) layer in CIGS solar cell devices, was studied. It was found that cell parameters, in particular, the fill factor (F.F.) varied with the thickness of the i-ZnO layers and the variation of the F.F. was directly related to cell efficiency. A 16%-efficiency was achieved without use of an anti-reflection coating from wide-gap (Egâ¼1.3Â eV) CIGS solar cells by adjusting the deposition conditions of the i-ZnO layers.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 87, Issues 1â4, May 2005, Pages 541-548
Journal: Solar Energy Materials and Solar Cells - Volume 87, Issues 1â4, May 2005, Pages 541-548
نویسندگان
S. Ishizuka, K. Sakurai, A. Yamada, K. Matsubara, P. Fons, K. Iwata, S. Nakamura, Y. Kimura, T. Baba, H. Nakanishi, T. Kojima, S. Niki,