کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9667557 | 863757 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A numerical iterative method for solving Schrödinger and Poisson equations in nanoscale single, double and surrounding gate metal-oxide-semiconductor structures
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Numerical solution of the Schrödinger and Poisson equations (SPEs) plays an important role in semiconductor simulation. We in this paper present a robust iterative method to compute the self-consistent solution of the SPEs in nanoscale metal-oxide-semiconductor (MOS) structures. Based on the global convergence of the monotone iterative (MI) method in solving the quantum corrected nonlinear Poisson equation (PE), this iterative method is successfully implemented and tested on the single-, double-, and surrounding-gate (SG, DG, and AG) MOS structures. Compared with other approaches, various numerical simulations are demonstrated to show the accuracy and efficiency of the method.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Computer Physics Communications - Volume 169, Issues 1â3, 1 July 2005, Pages 309-312
Journal: Computer Physics Communications - Volume 169, Issues 1â3, 1 July 2005, Pages 309-312
نویسندگان
Yiming Li, Shao-Ming Yu,