کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9670315 | 1450401 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Manufacturing of Pt-electrode by wet etching
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Manufacturing of Pt-electrode by wet etching Manufacturing of Pt-electrode by wet etching](/preview/png/9670315.png)
چکیده انگلیسی
Increasing interest in bio-medical and analytical application of MST results in growing interest in patterning of platinum. A technique of platinum patterning was developed using sputtered Ti and CVD-deposited BPSG layers. A 600 °C heat treatment caused Ti and Pt migration. Resulted alloyed layer was removed in a standard H2SO4:H2O2 etchant. An influence of the heat treatment conditions on wet etching of the Ti-Pt alloyed layer was investigated. SIMS profiles, step measurement results and three-dimensional stress calculation were presented in the paper. Dependence of Pt-electrode features on Pt-sputtering conditions and on the type of the underlying insulator layer were discussed. Pt-electrodes on SiO2/Si3N4 dielectric layer were manufactured, suitably for ISFET application.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 82, Issues 3â4, December 2005, Pages 283-288
Journal: Microelectronic Engineering - Volume 82, Issues 3â4, December 2005, Pages 283-288
نویسندگان
M. Zaborowski, P. Grabiec, A. Barcz,