کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9670330 | 1450401 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Computer simulation of fullerene-based ultra-low k dielectrics
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Computer simulation of fullerene-based ultra-low k dielectrics Computer simulation of fullerene-based ultra-low k dielectrics](/preview/png/9670330.png)
چکیده انگلیسی
Three-dimensional fullerene based networks are proposed as new candidates for ultra-low k dielectric materials. C60 fullerene molecules are used as the nodes of the network. The nodes are connected by hydrocarbon chain molecules forming skeletons of simple cubic, face-centred-cubic or diamond-like symmetry. The structural units of the models consisting of two fullerenes and a hydrocarbon bridge molecule are optimised by means of quantum chemical methods. The density of local dipoles and electronic effects are considered to estimate the effective dielectric constant of the models. It is shown that k values of about 1.4 can be obtained if C6H12 chain molecules are used to connect C60 molecules on a network with diamond-like symmetry.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 82, Issues 3â4, December 2005, Pages 387-392
Journal: Microelectronic Engineering - Volume 82, Issues 3â4, December 2005, Pages 387-392
نویسندگان
H. Hermann, K. Zagorodniy, A. Touzik, M. Taut, G. Seifert,