کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9670370 | 1450401 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electron back scattered diffraction study of acoustomigration damage in Al/Ti metallization for SAW devices
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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![عکس صفحه اول مقاله: Electron back scattered diffraction study of acoustomigration damage in Al/Ti metallization for SAW devices Electron back scattered diffraction study of acoustomigration damage in Al/Ti metallization for SAW devices](/preview/png/9670370.png)
چکیده انگلیسی
The correlation between the microstructure of a 340 nm thick Al metallizations deposited on a thin Ti adhesive layer and damage due to acoustomigration was investigated. For this reason, the {1 1 1} textured metallization was acoustically loaded by gradually increasing rf power up to 3.6 W. The hillock and void formation during load experiments was mostly detected at such grain boundary triple junctions, which consist of two grain boundaries with misorientation angles <30° and one grain boundary with a misorientation angle >30°. The results were achieved by means of scanning electron microscopy, electron back scattered diffraction, and focused ion beam technique.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 82, Issues 3â4, December 2005, Pages 650-654
Journal: Microelectronic Engineering - Volume 82, Issues 3â4, December 2005, Pages 650-654
نویسندگان
M. PekarÄıÌková, S. Menzel, H. Wendrock, K. Wetzig,