کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9670393 | 1450402 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Terahertz radiation from narrow-gap semiconductors photoexcited by femtosecond laser pulses
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Terahertz radiation from narrow-gap semiconductors photoexcited by femtosecond laser pulses Terahertz radiation from narrow-gap semiconductors photoexcited by femtosecond laser pulses](/preview/png/9670393.png)
چکیده انگلیسی
Large increase of the emitted terahertz power has been observed for p-InAs samples with the p-doping levels of â1016-1017 cmâ3. This increase was explained by a large surface depletion layer and an electric-field-induced optical rectification effect in the layer. Terahertz fields radiated by the samples of all three investigated CdxHg1 â xTe layers was of the same order of magnitude. No azimuthal angle dependence of the radiated signal was detected, what evidences that linear current surge effect is dominating over nonlinear optical rectification. Azimuthal angle and magnetic fields emission witness that it is caused by linear photo-Dember type processes.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 81, Issues 2â4, August 2005, Pages 238-242
Journal: Microelectronic Engineering - Volume 81, Issues 2â4, August 2005, Pages 238-242
نویسندگان
R. AdomaviÄius, A. Urbanowicz, G. Molis, A. Krotkus,