کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9670422 | 1450402 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Optimization of Schottky barrier carbon nanotube field effect transistors
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
Carbon nanotube field-effect transistors (CNTFETs) have been studied in recent years as a potential alternative to CMOS devices, because of the capability of ballistic transport. CNTFETs can be fabricated with Ohmic or Schottky type contacts. We focus here on Schottky barrier CNTFETs which operate by modulating the transmission coefficient of carriers through the Schottky barriers at the interface between the metal and the carbon nanotube (CNT). The behavior of these devices has been studied by solving the coupled Schrödinger-Poisson equation system. In agreement with experimental results, simulations indicate the ambipolar behavior of these devices. However, the ambipolar behavior limits the performance of these devices in both on and off regimes. To suppress this effect a double gate structure is proposed. Simulations demonstrate that this structure exhibits improved device characteristics.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 81, Issues 2â4, August 2005, Pages 428-433
Journal: Microelectronic Engineering - Volume 81, Issues 2â4, August 2005, Pages 428-433
نویسندگان
M. Pourfath, E. Ungersboeck, A. Gehring, B.H. Cheong, W.J. Park, H. Kosina, S. Selberherr,