کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9670438 1450402 2005 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Simulation of multiple-gate quantum stub transistor
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Simulation of multiple-gate quantum stub transistor
چکیده انگلیسی
The quantum stub transistor has the potential for ultrafast, ultra low power signal processing in high density integrated circuits. However, the single gate stub transistor presents the shortcoming of requiring highly precise gate voltage to close the channel. By using a tight-binding model, we have shown that the multiple gate configuration can be used to reduce this problem. Besides, stubbed waveguides are known to develop a band structure, we propose that a stubbed wire with spin-orbit coupling (Rashba effect) could be used for spin polarized transport. This is an interesting feature, which can be used for spintronics devices. We also discuss how the Rashba effect is incorporated in our simulation program.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 81, Issues 2–4, August 2005, Pages 544-552
نویسندگان
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