کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9670439 | 1450402 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Spin injection in double magnetic tunnel junctions: A tight-binding study
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Spin injection in double magnetic tunnel junctions: A tight-binding study Spin injection in double magnetic tunnel junctions: A tight-binding study](/preview/png/9670439.png)
چکیده انگلیسی
Spin current injection in double magnetic tunnel junctions is investigated theoretically based on conservation of spin and charge currents. Numerical calculations are performed for spin accumulation, current density and spin polarization in Fe/insulator (I) (semiconductor (S))/Co/I(S)/Fe double junctions using generalized formalism based on the non-equilibrium Green's function, which are implemented with recursive calculation of real space Green's function in tight-binding model in linear response region. It is shown that spin accumulation leads to difference in resistance, depending on the direction of applied bias with respect to the magnetization configuration of the double barrier magnetic tunnel junctions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 81, Issues 2â4, August 2005, Pages 553-557
Journal: Microelectronic Engineering - Volume 81, Issues 2â4, August 2005, Pages 553-557
نویسندگان
Y. Li,