کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9670482 | 1450403 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Chemically conformal deposition of SrTiO3 thin films by Atomic Layer Deposition using conventional metal organic precursors and remote-plasma activated H2O
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
Chemically conformal deposition of SrTiO3 (STO) thin films was successfully achieved by ALD using conventional metal organic precursors and remote-plasma activated H2O. It was found that the ALD behavior of the STO film was critically dependent on the Sr(thd)2 source bubbling temperature. When the Sr-source bubbling temperature was < â¼Â 200 °C (Sr(thd)2 melting temperature), the deposition proceeded in a genuine ALD mode and stoichiometric STO films were deposited with a good process reliability. Relatively good electrical properties were obtained from a planar capacitor structure with Pt top and Ru bottom electrodes. A 19.5-nm-thick STO film showed an equivalent oxide thickness (EOT) of 0.8 nm and a leakage current density of 1.98 Ã 10â6 A/cm2 at 1V after post-annealing.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 80, 17 June 2005, Pages 158-161
Journal: Microelectronic Engineering - Volume 80, 17 June 2005, Pages 158-161
نویسندگان
Sang Woon Lee, Oh Seong Kwon, Cheol Seong Hwang,