کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9670514 | 1450403 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The electrical properties of Metal-Ferroelectric (PbZr0.53Ti0.47O3)-Insulator-Silicon (MFIS) capacitors with different insulator materials
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: The electrical properties of Metal-Ferroelectric (PbZr0.53Ti0.47O3)-Insulator-Silicon (MFIS) capacitors with different insulator materials The electrical properties of Metal-Ferroelectric (PbZr0.53Ti0.47O3)-Insulator-Silicon (MFIS) capacitors with different insulator materials](/preview/png/9670514.png)
چکیده انگلیسی
MFIS capacitors with Pb(Zr0.53, Ti0.47)O3 (PZT) ferroelectric layer and HfO2, La2O3 and Dy2O3 insulator layers were fabricated and characterized. The size of the capacitance-voltage (C-V) memory windows was investigated. The maximum memory windows of MFIS capacitors with La2O3 and Dy2O3 insulators are close to the theoretical value ÎW â 2dfEc â 1.8 V. The temperature dependence of the current conduction mechanisms through the MFIS capacitors was also investigated. In the temperature range of 375-450 K, the electrical conduction of MFIS capacitors with HfO2 and Dy2O3 insulators is space-charge-limited current (SCLC), whereas for Al/PZT/La2O3/Si capacitor Poole-Frenkel emission was the dominant mechanism at higher fields (⩾0.8 MV/cm) in the temperature range from 325 K to 400 K.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 80, 17 June 2005, Pages 309-312
Journal: Microelectronic Engineering - Volume 80, 17 June 2005, Pages 309-312
نویسندگان
Pi-chun Juan, Yu-ping Hu, Fu-chien Chiu, Joseph Ya-min Lee,