UVIII for combined e-beam and optical exposure hybrid lithography

A chemically amplified resist (UVIII) is assessed for a mix-and-match approach to lithography using both optical and electron beam exposures, followed by a single development step. The order in which exposures take place is found not to influence behaviour, other than a loss in sensitivity to either type of exposure, resulting from the delay under vacuum. This loss in sensitivity can be accounted for simply by increasing the dose for parts of the pattern exposed earlier in the e-beam system. The dependence of the contrast on processing conditions is found to depend on the method of exposure.