کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9670576 | 1450404 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Geometry dependence of the energy levels in silicon isolated double quantum-dots
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Geometry dependence of the energy levels in silicon isolated double quantum-dots Geometry dependence of the energy levels in silicon isolated double quantum-dots](/preview/png/9670576.png)
چکیده انگلیسی
We present the fabrication and low-temperature electron transport measurements of circuits consisting of a single-island single-electron transistor monitoring an isolated double quantum-dot for a range of devices with different double quantum-dot geometries. Devices are fabricated in highly doped silicon-on-insulator, using electron beam lithography and reactive ion etching resulting in 'trench isolated' circuit elements that are capacitively coupled. We observe polarization of the isolated double quantum-dots as a function of the side gate potentials through changes in the single-electron transistor conduction characteristics. Polarization characteristics are seen to vary systematically with double quantum-dot geometry, which is attributed to the energy level structure of the isolated double quantum dot.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volumes 78â79, March 2005, Pages 195-200
Journal: Microelectronic Engineering - Volumes 78â79, March 2005, Pages 195-200
نویسندگان
M.G. Tanner, E.G. Emiroglu, D.G. Hasko, D.A. Williams,