کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9670580 | 1450404 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Double-island single-electron transistor operated at radio-frequency for sensitive and fast charge detection
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
We present a double-island single-electron transistor operated at radio-frequency (rf-DISET) for fast and highly sensitive detection of charge motion in the solid state. The devices were fabricated using electron-beam lithography and a standard shadow-mask evaporation technique. Fast operation was made possible by including a DISET in an impedance-matching tank circuit. Well above 1/f noise this DISET exhibited an excellent charge sensitivity of 5.6Ã10-6e/Hz. We present time-domain measurements of small charge signals (⩽0.1e) made on μs timescales, and show results that indicate our entire system has a noise temperature of just 2.1 K.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volumes 78â79, March 2005, Pages 218-223
Journal: Microelectronic Engineering - Volumes 78â79, March 2005, Pages 218-223
نویسندگان
R. Brenner, T.M. Buehler, D.J. Reilly,