کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9670586 | 1450404 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Utilizing self-assembled multilayers in lithographic processing for nanostructure fabrication: Initial evaluation of the electrical integrity of nanogaps
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Utilizing self-assembled multilayers in lithographic processing for nanostructure fabrication: Initial evaluation of the electrical integrity of nanogaps Utilizing self-assembled multilayers in lithographic processing for nanostructure fabrication: Initial evaluation of the electrical integrity of nanogaps](/preview/png/9670586.png)
چکیده انگلیسی
We apply self-assembly to form multilayers on gold structures formed by lithographic techniques to create patterns with spacings in the 10-100Â nm regime. Controlled placement and thickness of these multilayers form “molecular ruler” resists to tailor spacings accurately between lithographically defined structures. We report on recent results both in designing and patterning complex nanostructures by combining photolithography and molecular rulers. After exposure, development, metal deposition, and lift-off of both the photoresist and molecular resist, the final product has secondary structures and gaps selectively oriented to create hierarchical nanostructures. The electrical integrity of the nanogaps formed using this process is evaluated for a variety of multilayer thicknesses and electrodes widths.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volumes 78â79, March 2005, Pages 248-252
Journal: Microelectronic Engineering - Volumes 78â79, March 2005, Pages 248-252
نویسندگان
M.E. Anderson, Charan Srinivasan, Raviprakesh Jayaraman, P.S. Weiss, M.W. Horn,