کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9670603 | 1450404 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Improvement in the aspect ratio of fabricated minute dots by the volume change thermal lithography technique
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
Volume change thermal lithography has been developed as a low cost and simple lithography technique for application in optical mastering. The combination of the temperature distribution induced by a focused laser spot with a Gaussian distribution and a special multilayer consisting of TbFeCo and ZnS-SiO2 are utilized. Application of heat to these materials induces interdiffusion and as a result local volume expansion leading to the formation of a convex surface region. This technique was used to fabricate nano-dots with dimensions less them 100Â nm on the sample surface. Typical nano-dot height, however, was less than 20Â nm and this value is not sufficient for the pit height of an optical master disk. To address this problem, a PtOx film was inserted between the TbFeCo and ZnS-SiO2 layers. Laser irradiated PtOx decomposed to Pt and oxygen leading to additional surface protrusion due to the combination of the thermally induced interdiffusion of the TbFeCo and ZnS-SiO2 region and PtOx decomposition induced compressive stress. Nano-dots of 110Â nm diameter and 37Â nm height were successfully fabricated. Transmission electron microscope (TEM) observations of the nano-dot structure are reported.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volumes 78â79, March 2005, Pages 359-363
Journal: Microelectronic Engineering - Volumes 78â79, March 2005, Pages 359-363
نویسندگان
M. Kuwahara, J.H. Kim, P. Fons, J. Tominaga,