کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9670608 1450404 2005 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Line end shortening in CPL mask technology
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Line end shortening in CPL mask technology
چکیده انگلیسی
Various types of line ends have been evaluated for either straight CPL mask or hybrid type builds. The authors will focus on image line end shortening and the impact of through dose and focus performance for very high NA ArF imaging. Simulations on test structures have been calculated along with in photoresist simulations to predict the impact on process window capability. Test structures have been designed and fabricated into a functional test for evaluation. Process evaluations have been completed and exposure-defocus window calculated.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volumes 78–79, March 2005, Pages 393-397
نویسندگان
, , , , , , , , , , , , , , , , ,