کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9670631 | 1450404 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Simulation of the energy absorption and the resist development at sub-150Â nm ion lithography
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
The simulation tools for sub-150Â nm ion beam lithography require more adequate models of the ion scattering, the energy losses and the development process. Accumulation and analysis of calculated results and physical parameters included in the models permit deeper understanding of the processes, comparison with experimental data and optimization of the simulation tools. Ion lithography of poly-methyl methacrylate of thickness up to 400Â nm is studied. From the detailed simulation study, significant information on the energy losses, ranges and moments of the space distributions for different ions is obtained. It is concluded that the exposure with He ions with energies from 60 to 100Â keV is favorable for sub-150Â nm region. The presented energy absorption data confirm the importance of the electronic losses and the negligible effect of the nuclear losses on the local resist modification. Using simulation tools, accurate prediction of final resist profiles (after development) and analysis of obtained results at different process parameters of sub-150Â nm structures is performed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volumes 78â79, March 2005, Pages 533-539
Journal: Microelectronic Engineering - Volumes 78â79, March 2005, Pages 533-539
نویسندگان
K. Vutova, G. Mladenov, T. Tanaka, K. Kawabata,